 The paper reviews the current status and challenges of aggressive equivalent oxide thickness, eOIP, scaling of high-Kappa gate dielectrics via higher Kappa, greater than 20th, materials and interfacial layer, AL, scavenging techniques. Law-based higher-Kappa materials show promising eOTI scaling, but with effective work function, EWF, values suitable only for n-type field effect transistor, FET. Further exploration for p-type FET compatible higher-Kappa materials is needed. Meanwhile, Illinois scavenging is a promising approach to extend HF-based high-Kappa dielectrics to future nodes. Remote IL scavenging techniques enable EOT scaling below 0.5 nanometers. Mobility EOT trends in the literature suggest that short-channel performance improvement is attainable with aggressive EOT scaling via IL scavenging or lossillicate formation. However, extreme IL scaling, 0AL, is accompanied by loss of EWF control and with severe penalty in reliability. Therefore, highly precise IL thickness control in an ultra-thin IL regime, less than 0.5 nanometers, will be the key technology to satisfy both performance and reliability requirements for future CMOS devices.