 This study examined the effectiveness of adding a non-ferroelectric La-203 layer to a typical ferroelectric capacitor consisting of a HF0.5 ZR0.502 ferroelectric thin film and tin electrodes. The researchers found that the addition of the La-203 layer can improve the reliability of the device for non-volatile memory applications. They also identified several degradation mechanisms that affect the device's performance, including electric field cycling and polarization retention. By modifying the bottom interface between the electrode and the ferroelectric layer, the researchers were able to optimize the device's performance. This article was authored by Furkan Mahmoud, Ruben Al-Khalla, Pramodavishnamurthy, and others.