 Pulse laser ablation was used to synthesize gon nanostructure on a porous silicon substrate, which exhibits high and sharp peak of psi at 2 theta equals 28.74 reflected from 111, plane and hgn rise at 2 theta equals 34.54, 2 theta equals 37.49, 2 theta equals 48.19, and 2 theta equals 57.99 which are reflected from 002, 100, 102, 110, planes respectively where 002, plane has the highest peak than others. AFM and FESM proved an increase in the grain size of gon, while reflectance of gon is 81.79% at the wavelength 306 nanometers with energy band gap of 3.9 EV. This article was authored by Huza Maldin Abdul Amir, Makram Fakri, and Ali Al Wahib. We are article.tv, links in the description below.