 This paper uses a one-dimensional tight binding Anderson model to study a disordered nanowire in the presence of an external gate, considering the low-temperature coherent regime and deriving three analytical expressions for the typical value of the thermo power as a function of the gate potential in different electron transport regimes inside and outside the band edges of the nanowire. The sample-to-sample fluctuations exhibit a sharp crossover from a Lorentzian distribution towards a Gaussian distribution as the band edges are approached. This article was authored by Riccardo Basizio, Genevieve Florey, and Sean Louie Picard.