 Hello, and welcome to this presentation on ST's 1200V M-Series of TrenchGate FieldStop IGBTs. Optimized for hard switching applications operating at up to 20 kHz, ST's M-Series of 1200V insulated gate bipolar transistors combine the best trade-off between conduction and switching energy with outstanding robustness and EMI behavior for more efficient and reliable solar inverters, welding equipment, uninterruptible power supplies, and industrial motor drives. A minimum short circuit with stand time of 10 microseconds at starting junction temperature of 150°C, an extended maximum operating junction temperature of 175°C, and a wide safe operating area are the main features of the new M-Series of 1200V IGBTs. These features increase the reliability of applications where high power dissipation is required. The devices also feature a low saturation voltage for high conduction efficiency, soft switching waveforms for excellent EMI behavior, a positive temperature coefficient for easy paralleling of devices, and a very thin IGBT die for better thermal resistance. In this slide we compare ST's 40A M-Series IGBTs with similar competitor devices. Device performance is analyzed at 150°C, and as you can see, our STGW40M120DF3 device shows the best trade-off between conduction losses and switching off energy. In this slide, the typical output and switching off characteristics for the 40A 1200V M-Series IGBTs are shown. On the left, the typical output characteristics at both 25 and 175°C can be observed. As you can see, a positive derating of collector-remitter saturation voltage occurs from 1.85V at 25°C to 2.3V at 175°C. On the right, the typical switching off energy is shown. Test conditions are VCC of 600V, a collector current equal to the nominal value, which is 40A, a gate resistance of 10ohms, and a gate emitter voltage equal to 15 over 0V at a temperature of 175°C. As you can see, despite the extremely high temperature of 175°C, the switching off energy losses are limited and the tail current is negligible. This makes the device ideal for industrial drive applications working at up to 20kHz in hard switching topologies. This slide shows the typical switching on energy at the extremely high temperature of 175°C. The test conditions are VCC of 600V, a collector current equal to the nominal current, which is 40A, a gate resistance of 10ohms, and a gate emitter voltage equal to 0 over 15V. The most recent generation diode technology, co-packaged in anti-parallel with the IGBT, provides a fast recovery time and enhanced softness, resulting in increased efficiency at turn-on and outstanding EMI A major benefit of the new 1200V M-Series of Trenchgate Field Stop IGBTs is the guaranteed minimum short circuit with stand time of 10 microseconds at a starting junction temperature of 150°C. The waveform shows the ability of the STGWA 40M120DF3 to sustain and switch off the short circuit event. Test conditions are a collector emitter voltage of 600V and the saturation current resulting from when the 15V of gate emitter voltage is applied at the same time and the starting junction temperature is 150°C. These features, combined with the maximum operating junction temperature of 175°C, enhance service lifetime and boost the reliability of applications where high robustness is required. For the complete list of part numbers belonging to the M-Series of 1200V IGBTs, please visit www.st.com.igbt. Thank you.