 We have identified three promising two-dimensional, 2D, materials for use in semiconductor logic devices, WS2, PTS2 and points A2. These materials exhibit high electron mobilities and finite band gaps, making them ideal candidates for future semiconductor applications. In particular, our calculations show that the phonon-limited electron mobility in points A2 is approximately 4,000 centimeters tube.v1.s1 at room temperature, which is the highest among all the compounds studied with an indirect band gap of around 1.25 EV. This work provides a valuable guide for experimentalists who wish to synthesize better 2D materials for semiconductor devices. This article was authored by Zhixu Huang, Wen Shuzhang and Wang Lizhang.