 Kavo 3 thin films grown by hybrid molecular beam epitaxy exhibited low electrical resistivity at low temperatures with residual resistivity ratios exceeding 90. However, films grown at either CA or VXS showed deteriorated transport properties due to the presence of extrinsic defects resulting from the non stoichiometry present in these films. This article was authored by Tatyana Kuznetsova, Mani Muller, Saskia F. Fisher and others.