 Abstract avalanche and surge robustness had been major challenges for developing next-generation power devices based on ultra-wide band-gap semiconductors. In this study, researchers had developed a novel heterojunction structure composed of n-type gallium oxide and p-type nickel oxide which can withstand high voltages and currents without damage. The heterojunction exhibits both avalanche and surge robustness, allowing for high-speed switching while maintaining reliability. This article was authored by Feng Jiu, He He Gong, Ming Xiao, and others.