 Parafskite-containing solar cells were fabricated in a two-step procedure with varying dipping times from 5s to 2h, and it was found that the current density and voltage of the device are enhanced at dipping times below 15 minutes. The remnant PBI-2 present in these devices acts as a blocking layer between the TiO2 semiconductor and the parafskite itself, reducing the probability of back electron transfer, charge recombination. Additionally, increased dipping time leads to an increase in the size of parafskite crystals at the parafskite hole transporting material interface. Approximately 15 minutes dipping time, till the operator 2% unconverted PBI-2, is necessary for achieving optimal device efficiency. This article was authored by Dian H. Chow, Konstantinos C. Stumpos, Christos D. Maliacas, and others.