 We have identified three promising two-dimensional, 2D materials for use in semiconductor logic devices, WS-2, PTS-2, and point-say-2. These materials exhibit high electron mobilities and finite band gaps, making them ideal candidates for future semiconductor applications. In particular, our calculations show that the phonon-limited electron mobility in point-say-2 is approximately 4,000 centimeters 2.v1.s1 at room temperature, which is the highest among all the compounds studied with an indirect band gap of around 1.25 Ed. This work provides a valuable guide for experimentalists who wish to synthesize better 2D materials for semiconductor devices. This article was authored by Zhishuo Huang, Wenxiu Zhang, and Wang Lijiang.