nanoHUB-U Fundamentals of Nanotransistors L1.3: MOSFET Device Metrics





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Uploaded on Oct 12, 2015

Table of Contents:
00:00 Lecture 1.3: MOSFET Device Metrics
00:29 MOSFET IV characteristics
01:01 Output characteristics
01:37 Output characteristic at a specific VGS
03:08 Output characteristics
04:52 MOSFET device metrics (i)
06:47 Output vs. transfer characteristics
07:07 Transfer characteristics
07:45 MOSFET transfer characteristics
09:40 MOSFET device metrics (ii)
11:45 MOSFET device metrics (iii)
13:40 Summary
14:21 Example: 32 nm N-MOS technology
15:07 Answers
15:20 N-channel vs. P-channel MOSFET
15:39 Example: 32 nm P-MOS technology
16:01 Lecture 1.3 Wrap-up

This video is part of the nanoHUB-U course "Fundamentals of Nanotransistors" currently available on nanoHUB at (https://nanohub.org/courses/nt) and on EdX (https://www.edx.org/course/nanotechno...)

This course provides a simple, conceptual framework for understanding the essential physics of nanoscale transistors. It assumes only a basic background in semiconductor physics and provides an opportunity to learn how some of the fascinating new discoveries about the flow of electrons at the nanoscale plays out in the context of a practical device.

The course is divided into four units: Transistors fundamentals Transistor electrostatics Ballistic MOSFETs Transmission theory of the MOSFET

The objective for this course is to provide students with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. The goal is to do this in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits. The course is designed for anyone seeking a sound, physical, but simple understanding of how nanoscale transistors operate. The course should be useful for advanced undergraduates, beginning graduate students, as well as researchers and practicing engineers and scientists.


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