 Abstract atomic layer deposition, ALD, is a key technique for the continued scaling of semiconductor devices, which increasingly relies on scalable processes for interface manipulation of structured surfaces on the atomic level. To address this challenge, a new approach was developed using trimethyl aluminum in combination with remote hydrogen plasma to transform silicon dioxide, SiO2, into alumina. This process enabled the formation of ultra-thin allox layers in selected regions defined by lithography, with lateral allox slash SiO2 interfaces having a step height of 0.3 nanometers and a surface potential step of up to 0.4V. Additionally, the introduction of fixed negative charges of 9 by 1012 cm2 enabled modulation of the surface band bending, which is relevant to the field effect passivation of silicon and low impedance charge transfer across contact interfaces. This article was authored by Alex Henning, Johannes D. Bartel, Lucas Walls, and others. We are article.tv, links in the description below.