nanoHUB-U Fundamentals of Nanotransistors L1.7: The "Virtual Source Model"





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Uploaded on Oct 12, 2015

Table of Contents:
00:00 Lecture 1.7: Virtual Source Model
00:54 IV characteristics of MOSFETs
01:17 MOSFET: IV (re-cap)
02:30 Piecewise model for ID(VGS, VDS)
04:33 From low VDS to high VDS
06:30 Empirical saturation function
07:29 Saturation function: FSAT (VD)
07:51 MOSFET: IV (re-cap)
08:09 Output resistance
09:40 Intrinsic vs. extrinsic voltages
11:56 Effect of series resistances
13:30 Simple (Level 0) VS model
15:07 The MIT VS Model
15:45 Summary

This video is part of the nanoHUB-U course "Fundamentals of Nanotransistors" currently available on nanoHUB at (https://nanohub.org/courses/nt) and on EdX (https://www.edx.org/course/nanotechno...)

This course provides a simple, conceptual framework for understanding the essential physics of nanoscale transistors. It assumes only a basic background in semiconductor physics and provides an opportunity to learn how some of the fascinating new discoveries about the flow of electrons at the nanoscale plays out in the context of a practical device.

The course is divided into four units: Transistors fundamentals Transistor electrostatics Ballistic MOSFETs Transmission theory of the MOSFET

The objective for this course is to provide students with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. The goal is to do this in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits. The course is designed for anyone seeking a sound, physical, but simple understanding of how nanoscale transistors operate. The course should be useful for advanced undergraduates, beginning graduate students, as well as researchers and practicing engineers and scientists.


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