 Current Status and Challenges of Aggressive Equivalent Oxide Thickness, EOD, Scaling of High-Capa Gate Dialectrics are Reviewed. Law-Based Higher-Capa Materials show aggressive EOD scaling, 0.5 to 0.8 nanometers, but with effective work function, EWF, values suitable only for n-type field effect transistor, FETF, materials. This article was authored by Takashi Ando.