 Hello, and welcome to this presentation on ST's latest 250-volt RF-DMOS transistor for class D and E plasma generators and industrial power supplies. With a breakdown voltage greater than 900 volts and housed in the innovative STAC air cavity package, the STAC250V2500E is a high-voltage RF-DMOS transistor featuring improved RF performances up to 600 watts typical and ruggedness requirements 20 to 1 all phases VSWR under a 250 volt supply voltage. The device features a 25% lower thermal resistance and higher MTTF compared to devices housed in ceramic packages. As we can see in the following curve, the STAC250V2500E achieves 23.5 dB gain and 75% efficiency at an output power of 600 watts. This makes it ideal for operation in RF class E plasma generators ranging from a few megahertz up to 27 megahertz. Such features make the device a cost effective solution for 250 volt industrial RF power class D and E generators such as induction heating, PECVD plasma sputtering, and production equipment for flat panel TVs and solar cells. In the following slide we show a comparison of the main device features with an equivalent competitors device. Thanks to ST's new high-voltage super DMOS technology and proprietary innovative STAC air cavity package, two STAC250V2500E transistors used together occupy a similar area to that of a single ceramic transistor enabling compact power supplies above 1 kilowatt. The device also features a higher load mismatch capability of 20 to 1 in all phases for industrial applications with stringent robustness requirements. Thanks for your attention. For further information please visit www.st.com slash rf dmos