 Flash memory is a type of non-volatile storage technology that is widely used today due to its ability to store data even when power is not supplied. As the demand for increased memory capacity increases, flash memory has been scaled down to smaller and smaller dimensions in order to reduce costs and increase performance. One of the most promising technologies for scaling down is charge trapping memory, which uses high-K dielectrics to improve performance. This paper reviews the current state of research into charge trapping memory with high-K dielectrics, including its application as a charge trapping layer, blocking layer, and tunneling layer. This article was authored by Chen Xiaoxiao, Sezhou Xiaoxiao, Stephen Taylor, and others.