 This paper proposes a novel memristor device based on hafnium oxide layers with varying levels of oxygen vacancy. This device can switch between high and low resistances, allowing it to act like a synapse in a neural network. It can also be programmed to perform analogue weight updates, making it suitable for use in neuromorphic computing applications. This article was authored by Duipak Prasadsahin, Kitee Park, Peter Heyang Chung, and others.