 Hello and welcome to this presentation on ST's 800 volt MD-Mesh K5 MOSFET series. ST's MD-Mesh K5 series of very high voltage super junction MOSFETs includes devices with breakdown voltage from 800 volts up to 1500 volts. ST's MD-Mesh K5 series features the industry's lowest device on state resistance 80 mili ohms for an 800 volt device in TO247 while also reducing the gate charge for faster and more efficient switching. The devices also have high avalanche robustness making them ideal for highly reliable designs. In the following presentation we will focus on the 800 volt device range. ST's 800 volt MD-Mesh K5 MOSFETs are optimized for hard switching applications including lighting, switch mode power supplies, adapters, uninterruptible power supplies and electric vehicle chargers. They also target industrial applications such as welding and metering. ST's range of 800 volt super junction MD-Mesh K5 MOSFETs is the largest on the market. The devices are available in 10 different RDS on values and 9 packages. With more than 45 devices in total they meet the high efficiency needs of a wide range of applications. When compared with competitor devices for a similar RDS on value ST's MD-Mesh K5 MOSFET has a much lower gate charge. ST is also the only supplier offering an 800 volt 180 mili ohm device which enables high performance and cost reduction. To achieve such performance with competitors parts you would have to connect two MOSFETs in parallel which would double the output capacitance losses and increase the bill of materials cost. The much lower gate charge of ST's 800 volt MD-Mesh K5 MOSFETs translates into a figure of merit which is on state resistance multiplied by the gate charge which is 63% lower than the closest device from the competition. When compared to planar MOSFETs the 800 volt MD-Mesh K5 MOSFETs also feature a 69% lower RDS on per unit of area. Application tests have been performed on a 35 watt, 65 watt and 75 watt LED driver based on flyback topology in order to demonstrate the benefits of using ST's 800 volt MD-Mesh K5 MOSFETs. In the following 35 watt LED driver application test we compared ST's STF5N80K5 800 volt MD-Mesh K5 MOSFET and the equivalent device from one of our main competitors. Both MOSFETs have a similar RDS on but thanks to the much lower gate charge and capacitance of ST's MOSFET higher efficiency is achieved over the entire load and during turnoff ST's MOSFET dissipates less energy. In the 65 watt LED driver application test based on flyback topology we compared ST's STF10N80K5 with two competitors devices having similar on state resistance values. The main difference between the three devices is the gate charge and capacitance which is much lower for ST's device. The test has confirmed the higher efficiency of ST's device over the entire load and lower energy dissipated during turnoff. Also in the 75 watt LED driver application test our MD-Mesh K5 MOSFET the STF14N80K5 resulted in a greater efficiency over the entire load and it dissipated lower energy during turnoff compared with the two competitors devices. For additional information and the complete list of part numbers belonging to ST's MD-Mesh K5 series of 800 volt MOSFETs please visit www.st.com slash MD-Mesh K5.