 Silicon quantum devices are becoming more advanced, requiring new techniques for monitoring and controlling them. We have developed methods for monitoring and controlling these devices using gate voltage pulsing and gate-based reflectometry. These techniques allow us to measure single electron occupancy, detect single electron movements, and study spin physics and poorly spin blockade. Additionally, our techniques can be used to scale up these devices to larger arrays, which could lead to the development of quantum processors. This article was offered by Fabio Anceloni, Jojbo Haslawski, Federico Fedele, and others.