 Flash memory is a type of non-volatile storage technology that is widely used today due to its ability to store data even when power is turned off. As the demand for larger memory capacities increases, flash memory has been scaled down to smaller and smaller dimensions in order to reduce costs and increase performance. One of the most promising technologies for scaling down is charge-trapping memory, CTM, which uses high-K dielectrics to improve performance. This paper reviews the current state of CTM research with high-K dielectrics, focusing on the application of high-K dielectrics as charge-trapping layers, blocking layers, and tunneling layers. This article was authored by Chun Zhao, Su Zhou Zhao, Stephen Taylor, and others.