 The study examined the effects of varying amounts of GA dopants on the microstructural features, optical parameters, and electrical characteristics of Solgel synthesized MG0.2 Zn0.80, MZO, thin films using the Solgel and spin-coating deposition technique. The results showed that incorporation of GA ions into the MZO nanocrystals refined the microstructure, reduced the average crystallite size and flatness of surface roughness, and increased the optical band-gap energy and Erbach energy with increasing GA doping level. The 2-at-percent and 3-at-percent GA-doped MZO thin films had better electrical properties than the undoped and 5-at-percent GA-doped MZO thin films. This article was authored by Chiengai Tsai, Shiting Chen, and Suen Meng Tsai.