 Hello and welcome to this presentation on ST's 900V MD-Mesh K5 MOSFET series. The 900V MD-Mesh K5 series offers a comprehensive set of features. These include a higher breakdown voltage that ensures a higher design margin and flexibility. Furthermore, ST's 900V MD-Mesh K5 series features the industry's lowest device on-state resistance, 99 mOhms in the TO247 package, and 810 mOhms in the D-PAC package for a 900V device, while also reducing the gate charge for faster and more efficient switching. The devices also have low input and output capacitances, which enable zero voltage switching with minimal energy loss. Another feature is the high threshold voltage that helps reduce electromagnetic interference and the noise of the system. The devices also have high avalanche robustness, making them ideal for highly reliable designs. ST's 900V MD-Mesh K5 MOSFETs are optimized for hard switching applications, including lighting, adapters, switch mode power supplies, uninterruptible power supplies, and electric vehicle chargers, giving designers the highest flexibility and margin. They also target industrial applications such as welding and metering. The portfolio offers a wide choice of products with on-state resistance from 0.099 ohms up to 2.1 ohms in different through-hole and SMD package options. The new series contains the industry's first 900V MOSFETs with on-state resistance below 100 mOhms, and the industry's best on-state resistance among D-PAC devices. As shown in the slide, ST's 900V MD-Mesh K5 MOSFET in D-PAC features an on-state resistance and figure of merit, which are respectively almost 33% and 57% lower than the closest device from the competition. Just to validate the benefits of ST's 900V MD-Mesh K5 series with respect to the competition, two different benchmarks have been performed. The first one, as shown in this slide, is related to the comparison of the turn-off switching energy, or E-off, on the inductive load under two different conditions. As the drain current changes, figure on the left, and as the intrinsic gain resistance changes, figure on the right. Graphs show that the MD-Mesh K5 series offers better turn-off switching energy than the competitors with a 31% reduction of power losses at maximum load. These results are also confirmed by the application test, as shown in the next slide. The application test has been performed on a 35W LED driver, comparing ST's STD 6N90K5 900V MD-Mesh K5 MOSFET and the equivalent device from the best competitor. Both MOSFETs have a similar on-state resistance. The only difference is the much lower gate charge of ST's MOSFET. Thanks to this feature, the MD-Mesh K5 device is faster with less energy dissipation during turn-off, resulting in higher efficiency over the entire load. For additional information and the complete list of part numbers belonging to ST's MD-Mesh K5 series of 900V MOSFETs, please visit www.st.com.com.com.