Nanoelectronic Modeling Lecture 39: OMEN: Band-to-Band-Tunneling Transistors - Part 1/3





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Uploaded on Aug 3, 2010

This presentation discusses the motivation for band-to-band tunneling transistors to lower the power requirements of the next generation transistors. The capabilities of OMEN to model such complex devices on an atomistic representation is demonstrated.

Learning Objectives:

Band-To-Band Tunneling Transistors may be "better" than a superscaled MOSFET because:
The subthreshold swing is possibly smaller than the ideal 60mV/dec in the best case MOSFET -- i.e the device turns off with a smaller voltage swing
Power reduction during the switching operation
The devices may be operated at voltages of around 0.2 volts rather than 0.9 volts
Power reduction
Gate-all-around BTBT nanowires appear to offer the best gate control and the best SS

On nanoHUB: http://nanohub.org/resources/9282


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