 The paper discusses two types of heterojunction diodes fabricated using pulse laser deposition, PLD, of molybdenum disulfide, MOS2, on 4H silicon carbide, 0001, surfaces with varying doping levels. The first type has n-type epitaxial doping, almost equals 1016 cm3, while the second type has n-plus ion implantation doping, greater than 1019 cm3. The paper then assesses the excellent thickness uniformity, is almost equal to 3L, MOS2, and conformal coverage of the PLD grown films by Raman mapping and transmission electron microscopy. Next, the paper examines the current injection across the heterojunctions by temperature dependent current voltage characterization of the diodes and by nanoscale current mapping with conductive atomic force microscopy. It is found that the six surface doping results in highly rectifying behavior for the MOS2-NCC junction and a strongly enhanced current injection for the MOS2-N-plus SIC1. Furthermore, thermionic emission is found to be there. This article was authored by Filippo Genazzo, Salvatore Ethan Panasci, Amanguela Scalero, and others. We are article.tv, links in the description below.