 The study reports the development of ultraviolet ozone, UVO, treatment for controlling oxygen vacancies in abstract sol-gel indium gallium zinc oxide, IgZO, semiconductors, which are used as active components of thin film transistors, TFTs. The UVO treatment enables the reduction of VO and increases MO bonding with invariant contact resistance, resulting in the normalization of VTH close to 0V and high operational durability under long-term bias stress. The study demonstrates the depletion load n-type inverters comprising depletion and enhancement modes, without end with UVO, on the same substrate that allow high gain, almost equals 10, with a moderate noise margin, making it advantageous for effective modulation of VTH with stable operation under long-term bias stress. This article was authored by Wansik Kim, Wonjun Lee, Taehyun Kwok, and others.