 A self-powered photodetector with broadband response ranging from deep ultraviolet to near-infrared is developed by combining FA1-XCSXPBA3 PARAVSKYTE with PDC2 layer, a newly discovered TMDs material. The device exhibits sensitivity to light illumination ranging from 200 to 1,550 nanometers, with the highest sensitivity centered at almost equals 800 Nm. It also shows a large on-off ratio of almost equals 104, a high-responsivity, R, of 313 mA W-1, a decent specific detectivity, D, of almost equals 1,013 zones, and a rapid response speed of 3.5 slash 4S. The device exhibits obvious sensitivity to polarized light, with a polarization sensitivity of 6.04. Finally, the PDC2 slash PARAVSKYTE detector can readily record 5P, O, L, Y, and U images sequentially produced by 808 Nm. These results suggest that the present PDC2 slash PARAVSKYTE shot key junction photodetectors may be useful for assembly of optoelectronic system applications in near future. This article was authored by Long Wizang, Qingming Chen, Zhixiang Zhang, and others. We are article.tv, links in the description below.