 High-mobility parafskite Biosn03 films can be successfully grown using a modified oxide molecular beam epitaxy, MBE, process. This process involves supplying pre-oxidized SN-Ox to address issues associated with volatile snow formation during MBE growth. As a result, epitaxial, stoichiometric Biosn03 films can be produced with room-temperature electron mobilities of 150 square centimeters v-1s-1. These findings open up a wide range of possibilities for future electronic devices. This article was authored by Santosh Raghavan, Timo Shuman, Hongyu Kim, and others.