If you're applying a positive voltage at the gate in order to create a channel of negative charge, and the body effect adds negative charge to the channel, wouldn't Vth decrease? the body effect seems to do the gate's job for it.
@pmcmena1: That's a very good question. The threshold voltage is a function of the total charge in the depletion region because the gate charge must mirror the depletion region charge before an inversion layer is formed. And the voltage at which inversion layer is formed is the threshold voltage. (Derived from Behzad Razavi's Book).
Hence, as the negative charges in the depletion region increase, gate voltage has to be beefed up to mirror the negative charge. Please correct me if I'm wrong.
@eneradi Thanks for the reply- I'm fairly certain you're correct, because I think my prof told us there was a positive correlation between Vsb and Vth, but I'd have to double check my notes. By "mirror" I assume you mean the number of positive charges on the gate must equal the number of negative charges in the channel, which sort of makes sense, but it's still very counterintuitive that a more negative body would have a harder time forming a channel.
@pmcmena1 Again, good question. I do mean equal charges when I say "Mirror". Now, about the counterintuitive nature of the phenomenon being talked about. If the channel is more negative and the gate voltage is not increased, what you say is true, it'll be better for conduction but think! If there's difference in the number of charges in the vertical direction, there'll be a potential gradient formed and will give rise to vertical conduction. Our goal is to get the electrons across the channel.
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deldude123 1 week ago
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eneradi 1 week ago
If you're applying a positive voltage at the gate in order to create a channel of negative charge, and the body effect adds negative charge to the channel, wouldn't Vth decrease? the body effect seems to do the gate's job for it.
pmcmena1 5 months ago
@pmcmena1: That's a very good question. The threshold voltage is a function of the total charge in the depletion region because the gate charge must mirror the depletion region charge before an inversion layer is formed. And the voltage at which inversion layer is formed is the threshold voltage. (Derived from Behzad Razavi's Book).
Hence, as the negative charges in the depletion region increase, gate voltage has to be beefed up to mirror the negative charge. Please correct me if I'm wrong.
eneradi 5 months ago
@eneradi Thanks for the reply- I'm fairly certain you're correct, because I think my prof told us there was a positive correlation between Vsb and Vth, but I'd have to double check my notes. By "mirror" I assume you mean the number of positive charges on the gate must equal the number of negative charges in the channel, which sort of makes sense, but it's still very counterintuitive that a more negative body would have a harder time forming a channel.
pmcmena1 5 months ago
@pmcmena1 Again, good question. I do mean equal charges when I say "Mirror". Now, about the counterintuitive nature of the phenomenon being talked about. If the channel is more negative and the gate voltage is not increased, what you say is true, it'll be better for conduction but think! If there's difference in the number of charges in the vertical direction, there'll be a potential gradient formed and will give rise to vertical conduction. Our goal is to get the electrons across the channel.
eneradi 5 months ago