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Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.26 eV. The polycrystalline material has the appearance of pale orange pieces. Undoped single crystal wafers appear clear orange, but strongly doped wafers appear darker due to free-carrier absorption. It is odorless and insoluble in water.
Gallium phosphide (GaP) crystal is used as an emitter and as a detector of THz radiation.
The most widely employed crystals for nonlinear optical generation and detection of THz radiation are ZnTe, gallium phosphide (GaP), and GaSe.
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