All Czochralski (CZ) grown silicon uses a quartz crucible to support the liquid silicon during crystal growth. The crucible is rotating, and a rotating silicon seed is dipped into the liquid and slowly pulled from the melt. As the seed is pulled, directional freezing of perfect, single-crystal silicon occurs. An ingot of silicon results from the pot of molten silicon.
在晶體成長期間,所有CZ法成長的矽會使用石英坩堝來支撐液態矽.坩堝會持續地轉動,和轉動的矽晶種會浸入液體中,在從熔化的金屬中慢慢拉起.當晶種拉起時,完美的方向凝固,單晶矽會產生.矽棒的產生是來自於熔化矽的鍋.
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