Published on Jun 22, 2012
Primer Taller de Propiedades Electrónicas, Ópticas y Magnéticas de Materiales
Combined eﬀects of intense laser ﬁeld and applied electric ﬁeld on exciton states in GaAs quantum wells: transition from the single to double quantum well
C. A. Duque, M. E. Mora-Ramos, E. Kasapoglu, H. Sari, and I. Sökmen
 Instituto de Física, Universidad de Antioquia, AA 1226 Medellín, Colombia.
 Facultad de Ciencias. Universidad Aut´onoma del Estado de Morelos. Ave. Universidad 1001. CP. 62209. Cuernavaca. Morelos. México.
 Cumhuriyet University, Physics Department, 58140 Sivas, Turkey.
 Dokuz Eylul University, Physics Department, 35160 Buca, Izmir, Turkey ,
The eﬀects of intense laser radiation on the exciton states in GaAs-Ga1−xAlxAs quantum wells are studied with the inclusion of applied dc electric ﬁelds oriented along the growth direction of the system. The calculations are made within the eﬀective mass and parabolic band approximations. The intense laser eﬀects have been included along the lines of the Floquet method, modifying the conﬁnement potential associated to the heterostructure. The results for the exciton binding energy, the energy of the exciton-related photoluminescence peak, and the carriers overlap integral are presented for several conﬁgurations of the quantum well size, the strength of the applied electric ﬁelds, and the incident laser radiation.