Upload

Loading...

This video is unavailable.

Electron Escape Dynamics

Like this video?

Sign in to make your opinion count.

Don't like this video?

Sign in to make your opinion count.

Want to watch this again later?

Sign in to add this video to a playlist.

Uploaded on Oct 4, 2009

A presentation entitled "Escape dynamics of a few electrons in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor" by Satoru Miyamoto from the Graduate School of Science and Technology at Keio University. The contents of which were published in Appl. Phys. Lett. 93, 222103 (2008). Full text can be found at http://link.aip.org/link/?APPLAB/93/2...

Transport dynamics of a few electrons in a quantum dot are investigated in a single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistors. Time-resolved measurements in a nanosecond regime are carried out to determine the escape times of the first, second, and third electrons from the quantum dot originally containing three electrons. The escape time strongly depends on the number of electrons due to the single-electron charging effect in the quantum dot, which makes it possible to achieve selective ejection of a desired number of electrons.

Loading...

Loading...

Transcript

The interactive transcript could not be loaded.

Loading...

Loading...

Ratings have been disabled for this video.
Rating is available when the video has been rented.
This feature is not available right now. Please try again later.

Loading...

Loading...
Working...
to add this to Watch Later

Add to