Sequence of VC-SEM images taken at gate voltage gate voltage 0 +20V in steps of 1V of a representative region of the device array consisting of 10 functional nanotube devices. The common drain (bottom electrode) is grounded and the independent sources (top electrodes) are floating. Devices 2, 4, 7, 8 are metallic; devices 1, 3, 6 and 9 are semiconducting.
Reference: http://dx.doi.org/10.1007/s12274-008-8034-3
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